Event description
Abstract: In this seminar, the impact of various types of radiation and electron injection, from either low energy electron beam or due to forward bias, on minority carrier transport in n- and p-type Gallium Oxide is presented and discussed.
One of the major issues in the current ultra-wide band gap materials development, is the low diffusion length of minority carriers, partially due to dislocation scattering. It has been shown, however, that electron injection in n- and p-type Gallium Oxide results in a significant increase of the minority carrier diffusion length, even after its deterioration due to exposure to alpha- and proton-irradiation.
Post electron injection diffusion length in irradiated material exceeds that in Ga2O3 prior to irradiation and injection. The root cause of the electron injection-induced effect is attributed to increase of minority carrier lifetime in the material due to non-equilibrium electrons trapping on native point defects. It is thus concluded that the electron injection is capable of “healing” the adverse impact of radiation on ultra-wide band gap semiconductors.